1. Identificação | |
Tipo de Referência | Artigo em Evento (Conference Proceedings) |
Site | mtc-m21b.sid.inpe.br |
Código do Detentor | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identificador | 8JMKD3MGP3W34P/3JDEM78 |
Repositório | sid.inpe.br/mtc-m21b/2015/04.29.19.04 |
Repositório de Metadados | sid.inpe.br/mtc-m21b/2015/04.29.19.04.13 |
Última Atualização dos Metadados | 2018:06.04.02.55.23 (UTC) administrator |
Chave Secundária | INPE--PRE/ |
Chave de Citação | RamirezRamosCoraTrav:2015:ChPuPE |
Título | Characterization of a Pulsed-DC PECVD System with Active Screen for DLC Films Growth |
Ano | 2015 |
Data de Acesso | 11 maio 2024 |
Tipo Secundário | PRE CI |
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2. Contextualização | |
Autor | 1 Ramirez Ramos, Marco Antonio 2 Corat, Evaldo José 3 Trava-Airoldi, Vladimir Jesus |
Identificador de Curriculo | 1 2 8JMKD3MGP5W/3C9JH33 |
Grupo | 1 LAS-CTE-INPE-MCTI-GOV-BR 2 LAS-CTE-INPE-MCTI-GOV-BR 3 LAS-CTE-INPE-MCTI-GOV-BR |
Afiliação | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 Instituto Nacional de Pesquisas Espaciais (INPE) 3 Instituto Nacional de Pesquisas Espaciais (INPE) |
Endereço de e-Mail do Autor | 1 marco.ramirez@las.inpe.br 2 corat@las.inpe.br 3 vladimir@las.inpe.br |
Nome do Evento | The International Conference on Metallurgical Coatings and Thin Films, 42 (ICMCTF). |
Localização do Evento | San Diego, California |
Data | 20-24 apr. |
Histórico (UTC) | 2015-04-29 19:04:13 :: simone -> administrator :: 2018-06-04 02:55:23 :: administrator -> simone :: 2015 |
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3. Conteúdo e estrutura | |
É a matriz ou uma cópia? | é a matriz |
Estágio do Conteúdo | concluido |
Transferível | 1 |
Tipo do Conteúdo | External Contribution |
Resumo | Active Screen technique, as an additional cathode, is an advanced technology used for metal surface plasma nitrating with apparent advantages over conventional one. Side effects such as arcing or other way of plasma instability could be considerably reduced with the use of the active screen technique and thus dealing to an improved surface quality. Because of the absence of information concerning the active screen technique used for DLC growth, specially on different kinds of steels a new and deeper studies about the process will be considered.[1] Active screen coupled to PECVD system allows obtaining DLC films with lower pressure, lower temperature and low power energy consumption, achieving an inferior production costs with higher adhesion and better quality films in terms of hardness, density and finishing [2]. Also, the homogeneity of the coating in large area is improved [3]. In this work cylindrical actives screens are home manufactured with the same diameter and different mesh sizes. The temperature variation on ss 420 substrate as a function of the time in argon plasma discharge, gas pressure inside of the chamber and screen mesh sizes were carefully measured. Keeping constant the bias and gas flow, a very interesting results show that the temperature rise faster for higher screen mesh even at very low argon pressure in the plasma discharge and the threshold mesh size and lower pressure value was found. Also a strong dependence of the final temperature with the gas pressure reveal the possibilities of obtaining a better conditions for DLC growth than in the conventional PECVD system. In order to show a great performance of this new system a very good DLC films were obtained with good mechanical, trybological and chemical properties. References [1] C.X. Li, J. Georges, X.Y. Li, Surf. Eng. 18 (2002) 453458. [2] C.X. Li, T. Bell, H. Dong, Surf. Eng. 18 (2002) 174181. [3] S. Corujeira Gallo, H. Dong, Vacuum 84 (2009) 321325. |
Área | FISMAT |
Arranjo | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Characterization of a... |
Conteúdo da Pasta doc | não têm arquivos |
Conteúdo da Pasta source | não têm arquivos |
Conteúdo da Pasta agreement | |
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4. Condições de acesso e uso | |
Idioma | en |
Grupo de Usuários | simone |
Grupo de Leitores | administrator simone |
Visibilidade | shown |
Permissão de Leitura | allow from all |
Permissão de Atualização | não transferida |
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5. Fontes relacionadas | |
Repositório Espelho | urlib.net/www/2011/03.29.20.55 |
Unidades Imediatamente Superiores | 8JMKD3MGPCW/3ESR3H2 |
Lista de Itens Citando | |
Acervo Hospedeiro | sid.inpe.br/mtc-m21b/2013/09.26.14.25.20 |
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6. Notas | |
Campos Vazios | archivingpolicy archivist booktitle callnumber copyholder copyright creatorhistory descriptionlevel dissemination doi e-mailaddress edition editor format isbn issn keywords label lineage mark nextedition notes numberoffiles numberofvolumes orcid organization pages parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle size sponsor subject targetfile tertiarymark tertiarytype type url versiontype volume |
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7. Controle da descrição | |
e-Mail (login) | simone |
atualizar | |
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